Global Intelligent Power Module (IPM) Market - By Power Device (Insulated Gate Bipolar Transistor, MOSFET), Operational Voltage (600V, 1200V), Current Rating (Upto 100 Amp, 100 to 600 Amp, 600 to 1000 Amp), Circuit Configuration (6 PACK, 7 PACK, Dual, 3 Phase Bridge), Application, Geography, Trends, Forecast - (2017 - 2022)

Published - Jan 2017 | Category - ICT and Media | No. of Pages - 144 | Published By - Mordor Intelligence

Report Highlights

Market Insights

The Global Intelligent Power Module Market is valued at USD 1.40 billion in 2016 and is expected to reach a value of USD 2.62 billion by the end of 2022, growing at a projected CAGR of 9.28% during the forecast period of 2017 - 2022. IPMs are hybrid power devices which combine low-loss and high-speed insulated-gate bipolar transistor (IGBT) or MOSFETs with protection circuitry and optimized gate drive. IPMs are high-functional power modules containing a dedicated built-in drive circuit for protection from under-voltage, overheating, overcurrent. Key features of IPMs include on-chip current sensor, over temperature protection and gate drive UV lockout. IPMs are being used in PV inverters, motor drives, air conditioning compressors, washing machines, vacuum cleaner, power factor correction, UPS, servo drives, drives for textile machines and etc.

Market Dynamics

The demand for IPMs among consumer electronics market, high-level integration of control and power components increasing reliability, and efficiency; with optimized systems reducing operating costs and PCB sizes are driving the global market. The shift towards renewable power resources like solar and wind energy, which extensively use IPMs in their power generation units are also fueling the market. However, technical issues due to power modules with SiC-bases may hinder growth, as they have higher frequencies which can't be synced through the existing control algorithms in the current industry. The need of increased complexity of the modules to provide solutions for heating and other issues raised due to high-frequency switches may also constrain the market.

Due to growing concerns about global environment, the trend of using electric vehicles is gaining pace, which uses IPMs extensively. Periodical developments of IPM models with enhanced features help in healthy competition among market players, which in turn provides the platform for R&D opportunities.

Market Segmentation

Based on power device, the IGBT IPMs dominate the current market and are expected continue over the forecast period as well. On the basis of operating voltage, the market can be segmented into 600V and 1200V devices. By circuit configuration, the market is segmented into 6-PACk, 7-PACk, Dual, 3 phase bridge etc. End-user applications include servo drives; UPS, renewable energy generation, consumer electronics etc., with consumer electronics market holding the major share. Being the consumer electronics manufacturing hub, Asia-Pacific IPM market is expected to grow at the maximum rate.

Key Industry Players

The key market players of the global IPM market are:

Mitsubishi Electric Corp


Infineon Technologies AG

Vincotech GmbH

Fuji Electric Co. Ltd

Fairchild Semiconductors

Powerex Inc.

Future Electronics Inc.

Sanken Electric Co. Ltd

STMicroelectronics N.V

ON Semiconductor Corporation

Key Deliverables of the study

Market definition of intelligent power modules in the global market along with market drivers and restraints.

Market segmentation and the corresponding market share analysis.

Global and region specific competitive market analysis of intelligent power modules.

Analysis of key factors, which influence the market scenarios along with the growth opportunities.

Identifying the market leaders and analyzing their strategic moves and their market share.

Covers the market landscape with the geographical footprint, key growth strategies, and competitive market share analysis.

This report provides in-depth analysis for Porter's five forces of the market. All these five major factors in the market have been quantified using internal key parameters governing each of them.

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